(Hong Kong)
Product Summary
The BTS3410G is an N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. The applications of the BTS3410G include All kinds of resistive, inductive and capacitive loads in switching or linear applications, μC compatible power switch for 12 V DC applications, Replaces electromechanical relays and discrete circuits.
Parametrics
BTS3410G absolute maximum ratings: (1)Drain source voltage, VDS: 42 V; (2)Drain source voltage for short circuit protection, Tj= -40 to 150℃, VDS(SC): 18V; (3)Continuous input current, IN: no limit when -0.2V ≤ VIN ≤ 10V; |IN|≤2mA when VIN < -0.2V or VIN > 10V; (4)Operating temperature, Tj: -40 to +150℃; (5)Storage temperature, Tstg: -55 to +150℃; (6)Power dissipation, Ptot: 0.8 W; (7)Unclamped single pulse inductive energy, each channel, EAS: 150mJ; (8)Load dump protection, VLD: 50 V; (9)Electrostatic discharge voltage, VESD: 2 kV.
Features
BTS3410G features: (1)Logic Level Input; (2)Input Protection (ESD); (3)Thermal shutdown with auto restart; (4)Overload protection; (5)Short circuit protection; (6)Overvoltage protection; (7)Current limitation; (8)Analog driving possible.
Diagrams
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 BTS3410G |
Infineon Technologies |
Power Switch ICs - POE / LAN SMART LW SIDE PWR 42V 1.3A |
Data Sheet |
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BTS3028SDL |
Infineon Technologies |
Power Switch ICs - POE / LAN HITFET |
Data Sheet |
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BTS3028SDR |
Infineon Technologies |
Power Switch ICs - POE / LAN HITFET SMART LOWSIDE PWR SW |
Data Sheet |
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BTS3046SDL |
Infineon Technologies |
Power Switch ICs - POE / LAN HITFET SMART LOWSIDE PWR SW |
Data Sheet |
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BTS3046SDR |
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Power Switch ICs - POE / LAN HITFET SMART LOWSIDE PWR SW |
Data Sheet |
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BTS307 |
Other |
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Data Sheet |
Negotiable |
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BTS307 E3062A |
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Power Switch ICs - POE / LAN PROFET SMART HI SIDE PWR SW |
Data Sheet |
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