(Hong Kong)
Product Summary
The BTS5210G is an N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. It can provide embedded protective functions. The applications of the BTS5210G include μC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads, All types of resistive, inductive and capacitve loads, Most suitable for loads with high inrush currents, so as lamps and Replaces electromechanical relays, fuses and discrete circuits.
Parametrics
BTS5210G absolute maximum ratings: (1)Supply voltage, Vbb: 43 V; (2)Supply voltage for full short circuit protection Tj,start =-40 to +150℃ Vbb: 36 V; (3)Load current (Short-circuit current, see page 6) IL: self-limited A; (4)Operating temperature range Tj: -40 to +150℃; (5)Storage temperature range Tstg: -55 to +150℃; (6)Current through input pin (DC) IIN: ±0.3 mA; (7)Pulsed current through input pin5) IINp: ±5.0 mA; (8)Current through status pin (DC) IST: ±5.0 mA.
Features
BTS5210G features: (1)Very low standby current; (2)CMOS compatible input; (3)Improved electromagnetic compatibility (EMC); (4)Fast demagnetization of inductive loads; (5)Stable behaviour at undervoltage; (6)Wide operating voltage range; (7)Logic ground independent from load ground.
Diagrams
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 BTS5210G |
Infineon Technologies |
Power Switch ICs - Power Distribution SMART HI SIDE PWR SWITCH 2 CHANNELS |
Data Sheet |
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Power Switch ICs - Power Distribution Smart Hi-side Hi Currnt PWR Switch |
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Power Switch ICs - POE / LAN HIC-PROFET |
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BTS50060-1TEA |
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Power Switch ICs - POE / LAN Smart Hi-Side Pwr SW 1 Channel |
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